Growth of anatase TiO 2 thin films by laser ablation

Abstract

Thin TiO 2 films were grown on (001) SiO 2 substrates using excimer KrF laser ablation of ceramic targets. The influence of deposition temperatures at fixed oxygen pressure of 10 Pa on the crystal and optical properties of the films was investigated. Structural characterisation by X-ray diffraction and Raman spectroscopy shows preferential crystallization of the anatase TiO 2 films were obtained at high temperatures of 500 and 600 °C, respectively. Optical transmission as high as 92% in the visible spectral region was measured for films grown at temperatures higher than 400 °C. The refractive index and the thickness of the films measured by m-line spectroscopy shows the highest values of 2/41 and 250 nm, respectively, at deposition temperature of 600 °C.