Abstract
This paper investigates the current-voltage characteristics (CVC) strain of p-n-junction in a strong microwave (MW) field and shows that the deformation increases the current generated in the p-n-junction. We analyze the current-voltage characteristics of p-n-junction in which three-dimensional space (I,U,e) gives more complete information than the two-dimensional.
Highlights
The first experimental study of the heating of the charge carriers by the strong electric field in inhomogeneous semiconductors began with thermopower measurements of hot charge carriers occurring at the p-n-junction. [1] [2] studied the current-voltage characteristics (CVC) and investigated the variation of photoelectric characteristics of silicon p-n-junctions in strong microwave fields
In [3] [4], the results of theoretical and experimental studies of the effect of occurrence of negative differential resistance of the diode structures based on p-njunction theoretically described experimentally observed effect of occurrence of negative differential resistance mode and switch to the tunnel diode when exposed to high levels of microwave power
EMF of hot carriers Uoc, generated at unsymmetrical p-n-junction in the microwave electromagnetic field, despite the fact that the electron temperature much higher than that of the holes is determined by the hot holes [5]
Summary
The first experimental study of the heating of the charge carriers by the strong electric field in inhomogeneous semiconductors began with thermopower measurements of hot charge carriers occurring at the p-n-junction. [1] [2] studied the current-voltage characteristics (CVC) and investigated the variation of photoelectric characteristics of silicon p-n-junctions in strong microwave fields. In [7] studied the effect of distortion of the heating wave on the recombination currents and electromotive force generated at the p-n-junction in a strong microwave field. The effect of deformation on the electrical properties of semiconductor devices was presented in many papers [8]-[10], where it showed the action of the pressure change-voltage characteristic of p-n-junctions, Schottky diodes, transistors and other semiconductor devices. The study of these phenomena is of interest from two points of view. The aim of this work is to study the effect of deformation on the CVC p-n-junction in a strong microwave field
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