Abstract
In this paper, the dielectric properties of indium phosphide (InP) are investigated under a strong microwave field. By introducing a re-entrant coaxial cavity, the strong microwave field is constructed, and the dielectric properties of the material are monitored using the cavity perturbation method. It is shown that the dielectric properties of InP changes obviously under the given strong microwave field. From the experimental results and theoretical analysis, we conclude that the nonlinear behaviour is caused by a kind of non-thermal microwave effect. The experimental setup and method could also be applied to predict the consequences of non-thermal microwave effects of other high power microwave materials under strong microwave field.
Highlights
The electromagnetic properties of material have crucial guiding significance to their application
The shape, size, and height of the hillocks of Indium phosphate (InP) were found to vary with respect to ion fluence; and the amount of disorder in the irradiated samples increased as the ion fluence increased.[5]
It is demonstrated that microwave field actives ClTE centers of CdTe:Cl single crystals, which results in an increase in the intensity of photoluminescence line of excitons bound at the corresponding CLTE donor centers and the experimental results indicate that efficient modification of defect structure of the material under investigation because of microwave radiation.[21,22,23]
Summary
The electromagnetic properties of material have crucial guiding significance to their application.
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