Abstract
In this work we studied the influence of high-energy proton irradiation on the optical and structural properties of an Si/Ge superlattice (SL) with embedded Ge quantum dots (QDs). The presence of QDs in the as-grown samples was established by transmission electron microscopy and photoluminescence (PL). The samples were irradiated with 2.0 MeV protons to fluences in the range 2×10 12–2×10 14 cm –2. The structural characterization made by X-ray reciprocal space mapping, X-ray reflection and Rutherford backscattering/channelling has shown no changes in the as-grown heterostructure due to the irradiation. In spite of the expected high concentration of nonradiative recombination centres caused by the proton-induced damage, the PL emission from the Ge dots has been observed even for the highest irradiation fluence. The studied QD-in-SL structure has shown an extraordinarily high radiation hardness when compared with previously studied QD heterostructures.
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