Abstract
The photoluminescence (PL) inhomogeneity has been studied in InAs quantum dots (QDs) embedded in the symmetric In 0.15Ga 0.85As/GaAs quantum wells (QWs) with QDs grown at different temperatures. It was shown that three reasons are responsible for the emission inhomogeneity in studied QD structures: (i) the high concentration of nonradiative recombination centers in the capping In 0.15Ga 0.85As layer at low QD growth temperatures, (ii) the QD density and size distributions for the structure with QD grown at 510 ∘C, (iii) the high concentration of nonradiative recombination centers in the GaAs barrier at higher QD growth temperatures.
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