Abstract
The influence of clusters of defects formed by irradiation with neutrons in CdS single crystals on parameters of the spectra of exciton photoluminescence at T ∼ 4.2 K has been studied. It is experimentally established that irradiation of the samples with fast reactor neutrons with energies E ∼ 1 MeV and dose Φ = 3 × 1018 cm−2 brings about a decrease (by approximately 50 times) in the intensity of lines of exciton photoluminescence I1 (λm = 488.7 nm), I2 (λm = 486.9 nm), and I3 (λm = 486.3 nm) with redistribution of intensities in favor of the lines I1 and I3 and an increase in their half-width from 2 to 5–6 the positions of their peaks in the emission spectrum. Observed experimental facts are explained on the basis of a model of a two-phase system composed of slightly damaged region in the CdS single crystal in which clusters of defects (formed as a result of irradiation with neutrons) are embedded; these clusters are nanosized grains with a highly disordered structure.
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