Abstract
This article intends to discuss the ductile response of semiconductors crystals based on the quantitative dependence of brittle-to-ductile transition upon the transition pressure value in single point diamond turning. This was investigated by carrying out microindentation and single point diamond turning tests in three different [0 0 1]-oriented semiconductors, InSb, GaAs and Si single crystals. It is shown that the transition pressure value can be considered as a useful information to predict whether the ductile or brittle regime will prevail during micromachining and consequently to determine the machinability of monocrystalline semiconductor crystals. It is proposed that the ductility of semiconductors crystals during machining is inversely proportional to the transition pressure value. The application of the phase transformation concept to machine semiconductors crystals with large feeds is demonstrated. The generation of microstructures with extreme cutting conditions in soft and hard semiconductors is discussed. Examples of large feeds with ductile response applied to silicon and indium antimonide single crystals are presented. The generation of subsurface brittle damage during ductile machining will be briefly discussed.
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