A new simultaneous method of Hall and magnetoresistance measurements at low and high magnetic field on liquid and amorphous metals, and semiconductors

Abstract

The Hall signals of Ga and Hg metals at liquid and solid states obtained through a new simultaneous method have been examined and compared with those of amorphous metals and solid state semiconductors of Si and InSb single crystals. Liquid metals of Hg and Ga of 5 N pure, para and ferromagnetic films of amorphous iron, and single crystals of Si and InSb were used as samples. Liquid metals were enclosed in the cell made of Macor or Pyrex glass, in which ditch is 200 and 400 /spl mu/m deep. The temperature was monitored and controlled within 0.5/spl deg/C by a thermocouple buried at the bottom of the cell. DC magnetic field of low field less than 0.3 Tesla is applied with a lab electromagnet, a superconductor magnet for high magnetic field up to 9 Tesla. Liquid metals such as Hg and Ga show the Hall effect and negligible magnetoresistance effect in the solid state, but the magnetoresistance effect in the liquid state appears much larger than in the solid state and badly affects the Hall effect.. It is also found that there is the magnetoresistance effect even in Si single crystal although the effect cannot normally be observed in low magnetic field less than 1 Tesla. For the ferromagnetic materials, the Hall signal is very much affected by the magnetoresistance.