Abstract
AbstractThis work is devoted to investigation of Cu contamination on dislocation related luminescence (DRL) in Si. Cu is known to be a very fast diffuser with high solubility. Fz Si samples were plastically deformed at 950 °C up to dislocation density of about 107 cm–2. Cu diffusion was performed by diffusion at 950 °C from a quartz ampoule contaminated with Cu. The presence and concentration of luminescent copper (Cu PL) centers was evaluated from the excitation dependence of the copper bound exciton no‐phonon line (BE NP) line at 1.014eV, which was activated after annealing at 1100 °C and rapid quenching in the water. 10 minutes isochronous annealing of the samples in the temperature range 300–600 °C revealed quite a different behavior of D4 and D1/D2 lines. It was assumed that a strong decrease of D1/D2 line intensity in annealing interval 400–500 °C could be attributed to passivation of D1/D2 luminescence centers by Cu atoms. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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