Abstract
AbstractGeneration of dislocations during the growth of oxygen precipitates has been used as an alternative way of introduction of dislocation‐related luminescence centers. For this purpose a multistep annealing of Cz Si samples with different initial concentrations of oxygen has been carried out. The analysis of defect density and structure was performed by optical microscopy (OM) and transmission electron microscopy (TEM). The dislocation‐related luminescence (DRL) appeared only after a growth stage, while its intensity strongly depended on the duration of the preliminary nucleation treatment. The duration of growth annealing had a strong influence on the spectral distribution of the DRL intensity. No correlation has been found between a particular defect density, defined by TEM, and the shape of luminescence bands. Therefore, it was concluded that the cause of the gradual DRL transformation is redistribution of oxygen, collected near dislocations. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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