Abstract
Highly rectifying graphite/I²-Ga2O3 Schottky junctions have been prepared by a simple low-cost drop-casting process. The influence of two different crystal orientations on the current transport mechanism in the graphite-based Schottky junctions was investigated by direct-current (DC) and alternating-current (AC) electrical measurements. The nonideal behavior observed for both $$ \left\langle {\bar{2}01} \right\rangle $$ and $$ \left\langle {010} \right\rangle $$ crystallographic orientations can be explained by the lateral inhomogeneity of the junction related to the imperfection of the graphite/semiconductor interface. A lower density of interface states and their shorter time constants are reported for Schottky junctions formed on $$ \left\langle {\bar{2}01} \right\rangle $$ crystallographic plane, as reflected also by the higher effective barrier height and lower ideality factor.
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