Abstract
The electronic properties of transparent and conductive SrTiO 3 films, amorphous or crystalline, deposited by RF cathodic sputtering have been investigated and compared with those of amorphous or crystalline ITO deposits. The interactions between Ti 3+:3d 1(t 2g) non-bonding states, occurring in crystalline SrTiO 3 films that have a high oxygen deficiency, are responsible for the unexpectedly small band gap energy ( E g = 2.5 eV ). On the other hand, the band gap energy of amorphous SrTiO 3 deposits ( E g = 3.0 eV ) is close to that reported for a single crystal of SrTiO 3 ( E g = 3.2 eV ). Similar behaviour is not observed for ITO since amorphous and crystalline films have rather similar E g values (2.6 and 2.7 eV respectively). Finally, the work function of SrTiO 3 films is smaller than that of ITO films.
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