Influence of Constant Magnetic Fields on Defect Formation under Conditions of Heat Shock in Surface Layers of Silicon

Abstract

The work is devoted to the study of defect formation processes in the near-surface layers of silicon under thermal shock conditions and to the effect of preliminary exposure in a constant magnetic field on this process. As a result of investigations it was established that dislocation half-loops near the local heat source are formed in the near-surface layers of Si (with a depth of up to 30 μm) after a current pulse of density j> 5.1010 A / m2 passing through the metallized film on the silicon surface. In addition, it was found that preliminary exposure of samples in a constant magnetic field leads to an increase in the dislocation density compared to samples not exposed in a magnetic field.