Abstract
In this paper we have studied the effect of MOVPE growth conditions on the arsenic incorporation in strained InAsP quantum wells (QWs) grown on InP substrates. Lower growth temperatures result in an enhanced arsenic incorporation, as well as an improvement in the quality of the heterostructure. It is seen that an increase in the arsine flux does not readily increase the arsenic composition in the film which is dependent on temperature, strain and growth conditions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
