Abstract
The concentration of the intrinsic mid-gap donor EL2 in semi-insulating GaAs is known to be dependent on melt composition during crystal growth and on post-growth thermal treatment of crystals. A detailed analysis of data emerged from monitoring the production process of state-of-the-art GaAs substrates revealed discrepancies to the compensation model. By means of a combination of methods for quantitative point defect analysis we can show that EL2 concentration depends also on compensation ratio or position of Fermi level, respectively.
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