Abstract
Si bulk lifetime techniques are really sensitive to Co after dr ive-in step performed by RTP: the bulk diffusion length is strongly reduced, even at very low level of contamination. In case of p-type silicon, we point out that low energy photodissociation enhances this decrease, showing a pairing behavior of Co that has demonstrated to be with Boron, as for t he well known Fe-B pairs. A detailed study of the interaction of Co with Si which has been foc used on the detection of Co in Si using bulk lifetime methods, especially the SPV technique has been ca rried out. Evidence of recombination centers related to Co by Deep Level Transient Spect roscopy (DLTS) is shown, along with the activation of Co, its recovery kinetics in p-type Si and the low limi t of detection of the SPV technique.
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