Abstract
Gettering behaviors of Fe into solar cell grade Si are investigated by deep level transient spectroscopy. The samples contaminated with Fe in the range of the concentration of 1.5×10 12–2.0×10 14 cm −3 were annealed at 600 °C to induce gettering. It is shown that the surface layer gettering behaviors of Fe for the sample without p + layer strongly depend on the Fe contamination level, in which the surface layer gettering is not effective for the sample with low level contamination <1×10 13 cm −3 but effective for the sample with middle level contamination of 1–5×10 13 cm −3. In contrast, the samples with p + layer show effective gettering for low and middle level contaminations. The gettering mechanisms in solar cell grade Si without and with p + layer are discussed in details.
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