Abstract
Tb3+-doped ZnSe and ZnSe/ZnS nanocrystals were synthesized using modified hot-injection method. The observation of the characteristic quantum dots absorption features in a time-gated excitation spectrum was recorded while monitoring Tb3+ emission at 545 nm provided direct evidence for successful incorporation of dopant ions into semiconductor host. Relatively long decay time (∼1.5 ms) of Tb3+ emission indicated that dopant ions were well protected from interaction with surface ligands. Emission properties of core ZnSe:Tb3+ nanocrystals were only slightly modified upon growth of ZnS shell.
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