Abstract
The paper presents the results of a study on the optimization of the CdS buffer layer thickness for the production of high efficiency CIGS solar cells by analyzing the photoelectric parameters of elements with different thicknesses of the CdS layer. The difference in the efficiency of elements with CdS layer thicknesses of 20 and 80 nm was 30% (increase), and 50% (decrease) for elements with CdS layer thicknesses of 80 and 120 nm.
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