Abstract
We investigate the influence of carrier overflow on the forward-voltage characteristics of the InGaN-based blue light-emitting-diode (LED) by comparing the temperature-dependent characteristics of the electroluminescence (EL) efficiency, the EL spectra, and the current-voltage relation over a wide range of temperature (50–300 K). Based on these experimental results, we demonstrate that the simple ohmic potential drop in the Shockley diode equation is not sufficient to explain the experimental data when the severe carrier overflow to the p-(Al)GaN layer induces the efficiency droop in the LED device. The anomalous relation between current and voltage at cryogenic temperatures is explained by the space-charge-limited current formed by the overflown electrons, rather than by the increase of a constant series resistance in the p-(Al)GaN layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
