Abstract
Two kinds of InGaN-based light-emitting diodes (LEDs) having different electron concentrations in the n-GaN injection layer are investigated in order to understand the effects of unbalanced carrier injection on LED performance characteristics. Electrical and optical characteristics such as capacitance–voltage, current–voltage, external quantum efficiency, and electroluminescence spectrum are compared and analyzed. It is shown that the unbalanced carrier distribution in multiple quantum wells affects the forward operating voltage since a large disparity of injection rate between electrons and holes can induce a small effective active volume, thus leading to the severe overflow of electrons to the p-(Al)GaN layer in the LED devices.
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