Abstract
Abstract The influence of carrier lifetime on the cooling of a hot electron-hole plasma in bulk GaAs is studied by time-resolved photoluminescence. We observe a reduced cooling rate for samples with short carrier lifetime and an enhanced cooling rate for samples with long lifetime at high densities. The cooling rate is independent of carrier lifetime at low densities. The experimental data are in agreement with theory if the degeneracy of the electron and hole Fermi gas is taken into account.
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