Abstract
ABSTRACTThe influence of inter-carrier scattering phenomena on the noise performance of double-drift region (DDR) impact avalanche transit time diodes has been investigated. Three optimized Si DDR diode structures operating at 94, 140 and 220 GHz have been taken into account for this study. A newly reported analytical model of the ionization rates has been incorporated in the simulation in order to consider the effect of inter-carrier scattering inside the active region of the diodes and the noise performance of those have been evaluated by calculating the noise spectral density and noise measure around respective operating frequency bands. Results show that the noise performances of those are drastically worsened due to the aforementioned effect. The said deterioration has been found to be monotonically increasing in nature with the working frequency.
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