IMPATT Diodes Based on 〈111〉, 〈100〉, and 〈110〉 Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows.

Bhadrani Banerjee,Aritra Acharyya,Anvita Tripathi,Kumari Alka Singh,Adrija Das,J P Banerjee

doi:10.1155/2015/484768

Bhadrani Banerjee, Aritra Acharyya + Show 4 more

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https://doi.org/10.1155/2015/484768

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Abstract

The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 〈111〉, 〈100〉, and 〈110〉 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220 GHz. Results show that 〈111〉 oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94 GHz; however, the L-S performance of 〈110〉 oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94 GHz. The results presented in this paper will be helpful for the future experimentalists to choose the GaAs substrate of appropriate orientation to fabricate DDR GaAs IMPATT diodes at mm-wave frequencies.

Highlights

Impact avalanche transit time (IMPATT) diodes are well recognized two terminal solid-state devices to deliver sufficiently high power at both microwave and mm-wave frequency bands [1]
This fact encouraged the authors to carry out a comparative study on the L-S performance of double-drift region (DDR) IMPATT diodes based on ⟨111⟩, ⟨100⟩, and ⟨110⟩ oriented GaAs
In the present paper authors have used a nonsinusoidal voltage excited (NSVE) L-S simulation method developed by them [15,16,17,18,19,20] to investigate both the static (DC) and L-S characteristics of DDR IMPATTs based on ⟨111⟩, ⟨100⟩, and ⟨110⟩ oriented GaAs at different mm-wave atmospheric window frequencies, such as 35, 94, 140, and 220 GHz

Summary

Introduction

Impact avalanche transit time (IMPATT) diodes are well recognized two terminal solid-state devices to deliver sufficiently high power at both microwave and mm-wave frequency bands [1]. Since the RF performance of IMPATT diode is strongly dependent on the carrier ionization rates of the base material, the same must be significantly influenced by the crystal orientation of the substrate (here GaAs). This fact encouraged the authors to carry out a comparative study on the L-S performance of DDR IMPATT diodes based on ⟨111⟩, ⟨100⟩, and ⟨110⟩ oriented GaAs. Earlier in 1993, Pati et al [14] investigated the high frequency properties of ⟨111⟩, ⟨100⟩, and ⟨110⟩ oriented p+-n-n+, n+-p-p+ (single-drift region (SDR)), and n+-n-p-p+ (DDR) GaAs IMPATT diodes at both 35 and 60 GHz frequencies by using a small-signal (S-S) simulation technique based on drift-diffusion model. In the present paper authors have used a nonsinusoidal voltage excited (NSVE) L-S simulation method developed by them [15,16,17,18,19,20] to investigate both the static (DC) and L-S characteristics of DDR IMPATTs based on ⟨111⟩, ⟨100⟩, and ⟨110⟩ oriented GaAs at different mm-wave atmospheric window frequencies, such as 35, 94, 140, and 220 GHz

Large-Signal Modeling and Simulation Technique

Design parameters

Design and Material Parameters

Results and Discussion

Conclusions

E: Measure of energy from the bottom of the conduction band on the n-side