Abstract
Carbon doped SiGe (SiGe:C)/Si(001) heterostructure were grown by reduced pressure chemical vapor deposition using silane, germane and methylsilane as a source of Si, Ge, and C, respectively. We performed a systematic experiment of growth of SiGe:C and carried out measurements to determine the surface roughness and occupation sites of carbon atoms as functions of C source flow, Ge concentration, growth temperature and growth rate. Ge concentration range was from 0 to 23.0%. Growth temperature was 575 to 625 °C. The range of Growth rate was between 1.5 and 4.3 Å/s. These SiGe:C analyzed by atomic force microscopy (AFM), secondary ion mass spectrometry (SIMS), high-resolution X-ray diffraction (HR-XRD) and cross-sectional transmission electron microscopy (TEM). Total C compositions did not depend on growth temperature with the constant Ge concentration and with SiH3CH3 flow ratio. Surface roughness of SiGe:C with high Ge concentration increased with the increase of C source gas flow. Interstitial C concentration in SiGe:C films with rough surface increased with the increase of C source gas flow. The roughness of SiGe:C layer grown constant C gas source flow ratio decreased for low growth temperature and/or faster growth rate. From these results, we revealed that the mechanism of defect formation with localized C as the cause of rough. The excess migration can suppress surface roughness.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
