Abstract
Hall-effect data between 4 and 300 K on p-type strained quantum well structures in the InGaAs alloy system show pronounced effects due to the strain-induced splitting of the heavy- and light-hole valence bands. As a function of biaxial compression in the range 0.5–1.4%, the 77 K mobilities increase monotonically by a factor of ∼5, as does a high-temperature activation energy which is found to be nearly equal to the predicted strain splitting.
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