Influence of Buffer Layers on the Structure and Optical Properties of Na-Doped ZnO Thin Films Prepared by Sol–Gel Method

Abstract

Na-doped ZnO thin films on Si (100) substrates and on pure ZnO buffer layers prepared by sol-gel method, with the pure ZnO buffer layer annealing at 1073K for 90 min. X-ray diffraction (XRD) analyses revealed that all the films had a polycrystalline wurtzite structure and high c-axis preferred orientation. Photoluminescence(PL) spectra showed that the thin films produced strong emissions near ultraviolet(UV) and weak defect-related deep-level emission in visible regions. In addition, the effects of pure ZnO buffer layers on the structural and optical properties are discussed.