Abstract
Na-doped ZnO thin films were deposited on Si (1 0 0) substrates by sol–gel method. X-ray diffraction (XRD) analyses revealed that all the films had a polycrystalline wurtzite structure and high c-axis preferred orientation. PL spectra showed that the thin films produced strong emissions near ultraviolet (UV) and weak, defect-related deep-level emissions in visible regions. In addition, the effects of annealing condition on the structural and optical properties are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
