Abstract
The influence of the boron doping level in the range of 1 × 1015-2 × 1019 cm−3 on the position of the oxidation-induced stacking fault ring (R-OSF) in silicon crystals has been investigated by experiments and numerical simulation. For low boron-doped crystals, the position of the R-OSF is described by a critical value Ccrit defined by the ratio of the pull rate and the temperature gradient in the crystal at the solid/liquid interface. Boron concentrations higher than 1017 cm−3 shift the position of the R-OSF towards the wafer center without change of growth parameters. The critical value Ccrit converts into a function Ccrit(CB, depending linearly on the boron concentration CB. Crystal-originated particles (COP) and gate oxide integrity (GOI) yield distributions which are consistent with the R-OSF pattern. A low COP density and a high GOI yield are observed outside the ring; a high COP density and a medium GOI yield in the inner region bordered by the ring. It is assumed that boron atoms modify the thermodynamical properties of vacancies and self-interstitials.
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