Abstract
By inserting an auxiliary rf plasma source in an experimental setup for depositing TiO2 thin films with a cathodic vacuum arc and high voltage pulses, i.e. metal plasma immersion ion implantation & deposition (MePIIID), it is shown that this auxiliary plasma source can increase the growth rate at low gas flow ratios only but not increase the oxygen/titanium ratio. It can be surmised that the plasma source creates activated oxygen species which are otherwise supplied from collisions of the titanium plasma stream with the background gas at higher pressures.
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