Abstract
Abstract Diluted magnetic semiconductor (DMS) AlN:Cr films were produced by implanting various doses Cr + ions into AlN thin films at room temperature followed by a thermal annealing process. The structural and magnetic characteristics of the samples were investigated as a function of annealing temperature by means of Rutherford backscattering and channeling spectrometry (RBS/C), X-ray diffraction (XRD), Raman spectroscopy, vibrating sample magnetometer (VSM) and SQUID. Structural analyzes demonstrate that implantation damages gradually decrease with the increasing of annealing temperature. Moreover, better recrystallization in the implanted part of the samples was observed for the sample annealed at 950 °C. Both XRD and Raman pattern illustrate that no secondary phase or metal related-peaks were appear in all the samples. Magnetic analysis reveals that annealed Cr + -implanted samples exhibit ferromagnetism at room temperature, however, the sample annealed at 950 °C shows improved magnetic characteristics. The saturation magnetization is estimated to be 9.0×10 −5 emu/g and the coercive field ( H c ) is approximately 200 Oe for the samples annealed 950 °C. In SQUID analysis, FC/ZFC measurements indicate that the Curie temperature ( T C ) is well above room temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
