Abstract
Nitrogen-doped p-type zinc oxide films have been realized by radio frequency (rf) magnetron sputtering and post-annealing techniques. The effect of annealing temperature on the structural, electrical and optical properties of nitrogen-doped zinc oxide films was investigated by X-ray diffraction, Hall-effect, photoluminescence measurements. The nitrogen-doped p-type zinc oxide film with good structural, electrical and optical properties can be obtained at an intermediate annealing temperature region (e.g., 650°C). The nitrogen-doped p-type zinc oxide had the lowest resistivity of 2.9Ωcm, Hall mobility of 18cm2/Vs and carrier concentration of 1.3×1017cm−3. The p-type conduction behavior of the nitrogen-doped zinc oxide film was confirmed by the rectifying I–V characteristies of a ZnO homojunction. The chemical bonding states of nitrogen doped in ZnO film were examined by XPS analysis. Mechanism of the p-type conductivity was discussed in the present work.
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