Abstract
Doped vanadium dioxide (VO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) thin films could produced an excellent electrical and physical properties due to their characteristics and potential application in electronic engineering. The aim of this research is to study the characteristic of tungsten (W) doped VO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> thin films at different annealing temperatures. In this research, quartz substrates were used to deposit W doped VO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> thin films by controlling their annealing temperatures using sol-gel spin coating technique. All samples were analyzed and compared for their electrical and physical properties by using current-voltage (I-V) measurement and field emission scanning electron microscope (FESEM) respectively. The results shown that at higher annealing temperature, the thin film has greater grain growth on the surface and thicker layer on the sample cross-sectional area. While, for the electrical properties, the resistivity of the sample is decrease with the increasing of annealing temperature. As a conclusion, all samples shown different characteristic based on their annealing temperature used during the annealing process.
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