Abstract
The as-deposited CuIn1-xGaxSe2(CIGS) thin films were fabricated by magnetron sputtering from a quaternary CIGS target, and then the as-deposited films were annealed in a temperature range from 240℃ to 550℃. The effect of the annealing temperature on the electric properties(carrier concentration and carrier mobility) of the films was investigated in particular. The results show that when the annealing temperature was lower than 270℃, the highly conducive CuSe phase existed in the films leading to a high carrier concentration(1017-1019cm-3) and a low carrier mobility(~0.1 cm2·V-1·s-1). These films are not suited for CIGS absorber usage. When the annealing temperature was higher than 410℃, the carrier mobility of the films was high about 10 cm2·V-1·s-1and the carrier concentration was in a range of 1014-1017cm-3due to the disappearance of the CuSe phase. When the annealing temperature was higher than 410℃,with the increase of the annealing temperature the grains grew larger and the crystallinity of the films was enhanced, which could reduce the defects in the films and result in the decrease of the carrier concentration. From the aspect of the carrier concentration and the carrier mobility, the appropriate annealing temperature for fabricating the absorbers of the CIGS solar cells is from 450℃ to 550℃.
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