Year-end Sale % OFF 
Abstract
We have investigated the influence of the annealing method on the correlation between dislocations and the threshold voltage (Vth) of metal-semiconductor field-effect transistors fabricated on liquid encapsulated Czochralski grown undoped semi-insulating GaAs substrate. For the annealing under low arsenic pressure, a one-to-one correlation betweenthe Vth and the dislocations is found and the Vth becomes lower within about a 70 µm radius around the clustered dislocations. For the annealing with arsenic overpressure by AsH3 or with plasma chemical vapor deposited SiNx cap, the Vth is not affected by the dislocations. These results indicate that the Vth is affected by the distribution of stoichiometry of substrates.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
