Abstract
In this work, the influence of annealed ITO thin film as a transparent electrode layer in pulse laser deposition (PLD) Cu2ZnSnS4 (CZTS) thin-film solar cell was investigated. The proposed annealed ITO thin film exhibits a high degree of crystallinity and large and evenly distributed grains. Thus, low resistivity and wide and high transmitted band in the UV/VIS light range with ideal optical band gap of 3.8 eV can be obtained. Devices built with these annealed ITO thin films on our PLD CZTS solar cell exhibit a significant improvement in power conversion efficiency from 0.2% to 1.92%.
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