Abstract
An expression is derived for the diffusivity-mobility ratio in degenerate narrow-gap ternary semiconductors in the presence of a quantizing magnetic field. With the help of this expression, the diffusivity-mobility ratio is shown, taking n-Hg1−xCdxTe as an example, to have an oscillatory dependence on a quantizing magnetic field. The influence of alloy composition on such dependence is also investigated.
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