Abstract
In this paper we study the Einstein relation for the diffusivity mobility ratio (DMR) under magnetic quantization in III-V, II-VI, IV-VI and HgTe/CdTe SLs with graded interfaces by formulating the appropriate electron statistics. We have also investigated the DMR in III-V, II-VI, IV-VI and HgTe/CdTe effective mass SLs in the presence of quantizing magnetic field respectively. The DMRs in quantum wire GaAs/Ga1-xAlxAs, CdS/CdTe, PbTe/PbSnTe and HgTe/CdTe SLs and the corresponding effective mass SLs have further been studied. It appears that the DMR oscillates both with inverse quantizing magnetic field and electron concentration for GaAs/Ga1-xAlxAs, CdS/CdTe, PbTe/PbSnTe and HgTe/CdTe superlattices with graded interfaces. The DMR decreases with increasing film thickness and decreasing electron concentration for the said superlattices under 2D quantization of wave vector space.
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