Influence of active nitrogen species on surface and optical properties of epitaxial GaN films

Abstract

Influence of active nitrogen species on surface and optical properties of homoepitaxial GaN films grown on GaN epilayers has been investigated. The epitaxial GaN films were grown at varying plasma powers (350–500 W) under identical growth conditions. High resolution X-Ray diffraction, Field Emission Scanning Electron Microscopy, Atomic Force Microscopy and Photoluminescence measurements were employed to characterize the structural, morphological and optical properties of the grown GaN films. High plasma power (500 W) lead to an increment in active nitrogen radicals and yielded high crystalline quality with reduced dislocations compared to low plasma power (350, 400 W) which divulge the presence of metallic gallium on the surface and low roughness. The valence band maximum position, electron affinity and ionization energy of the films increased with increment in plasma power. PL measurements revealed narrow and intense band to band edge emission with negligible defect related yellow band peak for the sample grown at 500 W. The analysis conveyed that higher amount of active nitrogen species encouraged good optical properties with insignificant defect states which can be employed for the fabrication of high performance optoelectronic & photovoltaic devices.