Abstract
The present contribution deals with the influence of the copper concentration in Cu(In,Ga)Se 2 (CIGSe) on the solar cells based on CIGSe/(PVD)In 2S 3 and CIGSe/(CBD)CdS. We find that, depending on the buffer layer, the optimum open circuit voltage (Voc) is not reached for the same copper concentration. The values of Voc for the CIGSe/(CBD)CdS solar cells are higher when the copper content is very close to stoichiometry (25%), whereas, the Voc values for CIGSe/(PVD)In 2S 3 solar cells attain their maximum for lower copper contents. On the other hand, contrary to the case of the (CBD)CdS buffer, the Jsc is strongly hindered for the (PVD)In 2S 3 buffered cells when the copper content is lowered. The study has been made for different absorber gallium contents and the evolution is coherent with the presence of a cliff at the CIGSe/(PVD)In 2S 3 interface.
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