Abstract
Ga-doped ZnO (GZO) and GZO/Ni bi-layered films were prepared on polycarbonate (PC) substrates by DC and RF magnetron sputtering at room temperature in order to determine the influence of a Ni buffer layer on the structural, optical, and electrical properties of the GZO/Ni films. The thickness of the Ni buffer layer was varied between 2 and 5nm.As-deposited GZO films that contained the PC substrate show an average optical transmittance of 81.3% in the visible wavelength region and an electrical resistivity of 3.1×10−3Ωcm, while GZO/Ni bi-layered films show different optical and electrical properties that are dependent on the thickness of the Ni buffer layer. Although the GZO 100nm/Ni 5nm films possessed the lowest electrical resistivity (7.3×10−4Ωcm) and the largest grain size (16nm) in this study, GZO 100nm/Ni 2nm films showed best optoelectrical performance among the films. This superiority was due to the simultaneous optimization of the optical and electrical properties.
Published Version
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