Influence of γ – radiation on the properties of silicon with clusters impurity atoms of manganese and nickel

Zlixa Saparniyazova,Temur Ismaylov,Gulnaza Abdireymova,T Kh Hakimov,Gulnaz Turmanova,F.-J Lin,N Voropai,K Suslov,D Sidorov,A.M Foley,C.-I Chen,P Lombardi,Y Sun,A Kler

doi:10.1051/e3sconf/202128907020

Abstract

In works [1-4], it was shown that a number of new physical phenomena are observed in silicon with nanoclusters, such as high-temperature negative magnetoresistance (NMR), anomalously high impurity photoconductivity, giant residual photoconductivity, etc. All these phenomena are directly related to the presence of multiply charged, magnetic clusters of manganese atoms in the silicon lattice. It is shown that, on the basis of such materials, it is possible to create fundamentally new, highly sensitive magnetosensors, photodetectors of infrared radiation operating in the μm region and photomagnetic devices.

Highlights

As is known [5], g-irradiation in silicon creates primary radiation defects, such as vacancies (V) and interstitial atoms, as well as A centers
This paper presents the results of a study of the effect of γirradiation on the properties of silicon with nanoclusters of manganese atoms
Comparison of these results with the data of silicon doped with manganese without nanoclusters and control samples makes it possible to assume that in the samples with nanoclusters at high irradiation doses Ф>ФM, there is no accumulation of radiation defects and their effect on the material properties is practically absent [24-30]

Summary

Introduction

As is known [5], g-irradiation in silicon creates primary radiation defects, such as vacancies (V) and interstitial atoms, as well as A centers. With an increase in the radiation dose, i.e. when the concentration of such defects increases, secondary radiation defects can form These are divacancies (V2), trivacancies (V3), vacancy pores, and, various complexes of interstitial silicon atoms. This paper presents the results of a study of the effect of γirradiation on the properties of silicon with nanoclusters of manganese atoms. Such studies are of interest, on the one hand, for clarifying the features of radiation-induced defect formation and the interaction of defects with multiply charged clusters, and, on the other hand, for assessing the radiation resistance of such materials and devices based on them. After each stage of irradiation, the electrical and magnetophotoelectric properties of the samples were studied under identical conditions

The mathematical statement of the problem

Conclusions