Abstract
An inert, precursor free, argon jet is used to control the growth rate of electron beam induced deposition. Adjustment of the jet kinetic energy/inlet temperature can selectively increase surface diffusion to greatly enhance the deposition rate or deplete the surface precursor due to impact-stimulated desorption to minimize the deposition or completely clean the surface. Physical mechanisms for this process are described. While the electron beam is also observed to generate plasma upon interaction with an argon jet, our results indicate that plasma does not substantially contribute to the enhanced deposition rate.
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