Abstract
Inelastic resonant tunneling via localized states (LS) in an amorphous interlayer located between superconducting banks with s- and d-wave symmetry of the order parameters is studied theoretically. The developed theoretical model is applied to the description of high T/sub c/ Josephson junctions with semiconductor oxide interlayers. It is shown that the calculated form of the current-voltage characteristics and the temperature dependence of the zero bias conductivity fit the experimental data only if anisotropic pairing occurs in the S-banks.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call