Abstract
We report the etching characteristics of a stacked hafnium–indium–zinc oxide (HIZO) with a photoresist using the gas mixture of chlorine and argon (Cl2/Ar). The etching behaviors of HIZO have been investigated in terms of a source power, a bias power and a chamber pressure. As the concentration of Cl2 was increased compared to pure Ar, the etch rate of HIZO film was found slightly different from that of indium–zinc oxide (IZO) film. Moreover, to investigate the etching mechanism systematically, various inspections were carried out such as atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) depending on the portion of Cl2. Additionally, we compared the etching mechanism of HIZO film with IZO film to confirm the difference of chemical bonds caused by the influence of hafnium doping.
Published Version
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