Abstract
Based on transmission line modeling, this paper proposes an inductive peaking technology to improve the bandwidth of single‐walled carbon nanotube interconnect. And the transfer function of the equivalent model is derived to obtain the frequency response of the interconnect according to ABCD parameter matrix approach. Considering the effects of temperature, length, load resistance, and driver size, the 3‐dB bandwidth of the interconnect for 14 nm technology node at global level versus the peaking inductance has been obtained. The results show an increase of the peaking inductance can improve the bandwidth effectively. However, the increase is not boundless for higher inductances. The bandwidth will roughly maintain a steady level when the value of the inductance reaches a certain degree. Moreover, overshoot phenomenon will occur and the crosstalk is increased for larger inductance. On the other hand, as the length, temperature, and load resistance increase, 3‐dB bandwidth decreases correspondingly. Whereas it increases with the increase of the driver size.
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