Induced changes on visible emission and conductive type in N-doped ZnO films by rapid thermal process

Abstract

The erratic p-type conductivity in nitrogen-doped ZnO film is still under investigation and has been debated up to now. In this study, the authors have studied the effect of rapid thermal process (RTP) on the properties of N-doped ZnO films grown by metal-organic chemical vapor deposition. Hall-effect measurements show that the sample is of p-type as the RTP temperature is lower than 350 °C while, as the RTP temperature increased up to 550 °C or higher, the conduction-type of the sample changed to be n-type. Correspondingly, obvious D and G peaks, which are related to graphite clusters, are observed to increase their intensity with RTP temperature, indicating that interstitial or substitutional carbon atoms may migrate to form carbon clusters in the grain boundary during RTP. RTP is also found to lead to significant changes on the photoluminescence of the samples, with enhanced visible emissions observed as RTP temperature increased. Similar changes are observed on the intensity ratios of the D over G peaks and the visible emission around 600 nm over the near-band-edge emission. This indicates that besides zinc vacancy (VZn) and oxygen vacancy (VO), which are popularly ascribed as the origins of the visible emissions around 500 and 550 nm, carbon clusters may be a possible origin of the visible emission around 600 nm. Finally, carbon clusters formed in the grain boundary are also supposed to at least partly be responsible for the type transition caused by RTP.