Abstract
The precipitation of oxygen has been investigated for 1.5 MeV electron irradiated silicon samples with the dose of 3.5×1017 e/cm2. It has found that electron irradiation accelerated the oxygen precipitation in CZ-Si under higher annealing temperature. In addition, the effect of rapid thermal process (RTP) on the oxygen precipitation and on the denuded zone (DZ) formation in electron irradiated silicon wafers have been investigated by using optical microscope methods. The DZ can be formed at the surface in electron irradiated silicon wafers subjected to RTP pre-annealing. Furthermore, the width of DZ decreases with the RTP temperature.
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