Abstract
The effect of rapid thermal process (RTP) on oxygen precipitation in heavily boron-doped (HB) Czochralski (CZ) silicon (Si) wafers has been investigated. After RTP preannealing at high temperature, it was found that, contrary to lightly boron-doped (LB) silicon, a denuded zone (DZ) was not formed in the HB silicon. The oxygen precipitates and extended defects generated in the HB Si samples were smaller than those generated in the LB Si samples. It is considered that DZ formation by means of RTP may not be suitable for HB CZ silicon.
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