Indium-modified Yb:KLu(WO4)2 crystal: Growth, spectroscopy and laser operation

Abstract

We report on the growth, spectroscopic and laser characterization of a novel monoclinic laser crystal, Yb,In:KLu(WO4)2 (Yb,In:KLuW). The absorption, stimulated-emission and gain cross-section spectra of 3.5at% Yb, 5.5at% In-doped KLuW are determined at room temperature with polarized light and compared with those for Yb,In:KYW, as well as singly Yb-doped KLuW and KYW crystals. It is found that the introduction of In results in a decrease of the transition cross-sections and in a spectral broadening of the absorption and emission bands. Such a broadening is more pronounced for light polarization E ||Np. For Yb,In:KLuW, the maximum σabs is 9.9×10–20cm2 at 980.9nm for E ||Nm and the corresponding bandwidth of the absorption peak is 3.7nm. The radiative lifetime for Yb3+ ions is 237±5µs. The stimulated-emission cross-sections are σSE(m)=2.4×10–20cm2 at 1022.4nm and σSE(p)=1.3×10–20cm2 at 1039.1nm corresponding to an emission bandwidth of >30nm and >35nm, respectively. The diode-pumped Ng-cut Yb,In:KLuW microchip laser generated 4.11W at 1042–1048nm with a slope efficiency of 78%. The Yb,In:KLuW crystal is very promising for the generation of sub-100fs pulses in mode-locked lasers due to its broadband emission characteristics.